Forming B1-xCx Semiconductor Devices By Chemical Vapor Deposition

Forming B1-xCx Semiconductor Layers by Chemical Vapor Deposition

Determination of Optical Properties in Germanium Carbon Coatings Deposited by Plasma Enhanced Chemical Vapor Deposition

In this research, Germanium-carbon coatings were deposited on ZnS substrates by plasma enhanced chemical vapor deposition (PECVD) using GeH4 and CH4 precursors. Optical parameters of the Ge1-xCx coating such as refractive index, Absorption coefficient, extinction coefficient and band gap were measured by the Swanepoel method based on the transmittance spectrum. The results showed that the refra...

Thermal Stability and Substitutional Carbon Incorporation far above Solid- Solubility in Si1-xCx and Si1-x-yGexCy Layers Grown by Chemical Vapor Deposition using Disilane

Abstract Growth conditions for epitaxy of Si1-x-yGexCx and Si1-xCx alloy layers on (100) silicon substrates by rapid thermal chemical vapor deposition (RTCVD) with disilane as the silicon source gas are described and the Si1-xCx conditions are compared to previously reported RTCVD growth conditions for epitaxy of Si1-xCx using silane as the source gas. The thermal stability of the layers at 850...

Metalorganic Chemical Vapor Deposition For Optoelectronic Devices - Proceedings of the IEEE

The metalorganic chemical vapor deposition (MOCVD) process for electronic and photonic compound semiconductor materials and devices is reviewed. We begin with an introduction to the basic MOCVD chemical reaction process, gas delivery equipment, reaction chambers, and safety. Growth mechanisms, including hydrodynamics, boundary-layer issues, thermal effects, and pyrolysis reactions, are defined,...

Intermixing of InGaAs/GaAs quantum wells and quantum dots using sputter-deposited silicon oxynitride capping layers

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